Vacuum gate dielectric gate-all-around nanowire for hot carrier injection and bias temperature instability free transistor
نویسندگان
چکیده
Articles you may be interested in Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors Appl. Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors Appl. Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors Appl. Degradation of direct-tunneling gate oxide under hot-hole injection Appl. Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoid Appl.
منابع مشابه
Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor
In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...
متن کاملCharacteristics of PBTI and Hot Carrier Stress for LTPS-TFT With High-κ Gate Dielectric
In this letter, the characteristics of positive bias temperature instability (PBTI) and hot carrier stress (HCS) for the lowtemperature poly-Si thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric are well investigated for the first time. Under room temperature stress condition, the PBTI shows a more serious degradation than does HCS, indicating that the gate bias stress would dominate t...
متن کاملProduct Level Reliability Challenges for 65nm Technologies
We present a comprehensive review of product level reliability challenges for the 65nm technology node. The major reliability degradation mechanisms are analyzed for CMOS technologies. Historical data will show that hot carrier degradation has lost on importance and that negative bias temperature instability (NBTI) is the leading reliability concern for the 65nm technology node. Additionally, d...
متن کاملToward a streamlined projection of small device bias temperature instability lifetime distributions
Related Articles Local oxide capacitance as a crucial parameter for characterization of hot-carrier degradation in long-channel nMOSFETs J. Vac. Sci. Technol. B 31, 01A118 (2013) Mitigation of extreme ultraviolet mask defects by pattern shifting: Method and statistics J. Vac. Sci. Technol. B 30, 051605 (2012) Gallium nitride nanowire electromechanical resonators with piezoresistive readout J. V...
متن کاملRepresentation of the temperature nano-sensors via cylindrical gate-all-around Si-NW-FET
In this paper, the temperature dependence of some characteristics of cylindrical gate-all-around Si nanowire field effect transistor (GAA-Si-NWFET) is investigated to representing the temperature nano-sensor structures and improving their performance. Firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of GAA-Si-NWFET to propose the temperatu...
متن کامل